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| 2SK1521, 2SK1522 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1521, 2SK1522 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1521 2SK1522 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 50 200 50 250 150 -55 to +150 Unit V V A A A W C C 2 2SK1521, 2SK1522 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1521 V(BR)DSS 2SK1522 V(BR)GSS IGSS 450 500 30 -- -- -- -- -- -- 10 250 V A A V S pF pF pF ns ns ns ns V ns IF = 50 A, VGS = 0 IF = 50 A, VGS = 0, diF/dt = 100 A/s ID = 25 A, VGS = 10 V, RL = 1.2 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 22 -- -- -- -- -- -- -- -- -- -- 0.08 0.085 35 8700 2400 235 85 250 600 250 1.1 120 3.0 0.10 0.11 -- -- -- -- -- -- -- -- -- -- ID = 25 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1521 IDSS 2SK1522 Gate to source cutoff voltage ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V * 1 Static Drain to source 2SK1521 RDS(on) on state resistance 2SK1522 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test 3 2SK1521, 2SK1522 Power vs. Temperature Derating 300 Channel Dissipation Pch (W) Maximum Safe Operation Area 1,000 300 Drain Current ID (A) rea sa thi on) in R DS ( n tio by era ted DC Op limi is 100 30 10 3 1 0.3 200 PW er at 10 10 0 = Op 10 (T 1m m s( 1 s s s ot ion Sh 100 C = ) 25 C ) Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 1 2SK1521 2SK1522 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 8V 10 V 80 6V 80 5.5 V 60 5V 100 Typical Transfer Characteristics VDS = 20 V Pulse Test Drain Current ID (A) Drain Current ID (A) Pulse Test 60 40 40 20 4.5 V VGS = 4 V 20 TC = 75C 25C -25C 0 8 20 4 12 16 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1521, 2SK1522 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () 50 A Pulse Test 1 Pulse Test 0.5 4 3 0.2 0.1 0.05 VGS = 10, 15 V 2 20 A ID = 10 A 1 0.02 0.01 5 10 20 50 100 200 Drain Current ID (A) 500 0 4 12 16 8 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Pulse Test 0.4 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 0.5 50 TC = -25C 25C 75C 20 10 5 0.3 ID = 50 A 20 A 0.2 2 1 VDS = 20 V Pulse Test 1 2 5 10 20 Drain Current ID (A) 50 0.1 10 A 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.5 0.5 5 2SK1521, 2SK1522 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 10,000 Ciss 200 Capacitance C (pF) 100 50 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 1,000 Coss 20 10 100 Crss VGS = 0 f = 1 MHz 10 5 0.5 1 2 5 10 20 Reverse Drain Current IDR (A) 50 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V 300 VDS 200 ID = 50 A 100 VDD = 400 V 250 V 100 V 0 80 240 320 160 Gate Charge Qg (nc) 400 0 4 8 VGS 12 20 Gate to Source Voltage VGS (V) 5,000 Switching Characteristics . VGS = 10 V, VDD = 30 V . PW = 2 s, duty < 1% Switching Time t (ns) 400 16 2,000 1,000 500 tf 200 100 50 0.5 tr td (on) td (off) 1 2 5 10 20 Drain Current ID (A) 50 6 2SK1521, 2SK1522 Reverse Drain Current vs. Source to Drain Voltage 100 Pulse Test 80 Reverse Drain Current IDR (A) 60 40 VGS = 0, -5 V 10 V 20 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1 D=1 0.5 0.3 0.1 0.2 0.1 ch-c (t) = S (t) * ch-c ch-c = 0.5C/W, TC = 25C PDM lse t Pu 0.05 0.02 0.03 0.01 1 Sh o T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 0.01 10 100 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout 10% Vin 10% Waveforms 90% 10% 90% td (off) 50 Vin 10 V VDD . = 30 V . td (on) 90% tr tf 7 2SK1521, 2SK1522 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 8 |
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